06034882 is referenced by 948 patents and cites 42 patents.

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

Title
Vertically stacked field programmable nonvolatile memory and method of fabrication
Application Number
9/192883
Publication Number
6034882
Application Date
November 16, 1998
Publication Date
March 7, 2000
Inventor
James M Cleeves
Redwood City
CA, US
Paul Michael Farmwald
Portola Valley
CA, US
Vivek Subramanian
Menlo Park
CA, US
Thomas H Lee
Cupertino
CA, US
Mark G Johnson
Los Altos
CA, US
Agent
Blakely Sokoloff Taylor & Zafman
Assignee
Matrix Semiconductor
CA, US
IPC
G11C 17/00
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