06030881 is referenced by 278 patents and cites 6 patents.

A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and etch steps having varying etch rate-to-deposition rate (etch/dep) ratios. The first step uses an etch/dep ratio less than one to quickly fill the gap. The first step is interrupted before the opening to the gap is closed. The second step uses an etch/dep ratio greater than one to widen the gap. The second step is stopped before corners of the elements forming the gaps are exposed. These steps can be repeated until the aspect ratio of the gap is reduced so that void-free gap-fill is possible. The etch/dep ratio and duration of each step can be optimized for high throughput and high aspect ratio gap-fill capacity.

Title
High throughput chemical vapor deposition process capable of filling high aspect ratio structures
Application Number
9/72759
Publication Number
6030881
Application Date
May 5, 1998
Publication Date
February 29, 2000
Inventor
Patrick A Van Cleemput
Sunnyvale
CA, US
Laertis Economikos
Wappingers Falls
NY, US
Richard A Conti
Mount Cisco
NY, US
Ashima B Chakravarti
Hopewell Junction
NY, US
George D Papasouliotis
Fishkill
NY, US
Agent
Skjerven Morrill MacPherson Franklin & Friel
Agent
Tom Chen
Assignee
International Business Machines Corporation
NY, US
Novellus Systems
CA, US
IPC
H01L 21/762
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