05999444 is referenced by 178 patents and cites 3 patents.

A nonvolatile semiconductor memory device and writing method of the same having a planarly dispersed charge storing means, which improve the programming disturbance characteristic, wherein gate electrodes of a plurality of memory elements are connected to a plurality of word lines, source regions or drain regions are connected with a common line (for example, a bit line or a source line) which crosses the word lines in an electrically insulated state, and the memory device includes a write inhibit voltage supplying means for supplying a source region and/or drain region of a memory element connected to the selected word line with a reverse bias voltage placing the source/drain region in a reverse bias state to the channel forming region via the common line and a non-selected word line biasing means for supplying a non-selected word line with a voltage in the polarity placing the non-selected word, line in a reverse bias state to the channel forming region.

Title
Nonvolatile semiconductor memory device and writing and erasing method of the same
Application Number
9/144199
Publication Number
5999444
Application Date
August 31, 1998
Publication Date
December 7, 1999
Inventor
Yutaka Hayashi
Ibaraki
JP
Ichiro Fujiwara
Kanagawa
JP
Agent
Rader Fishman & Grauer
Agent
Ronald P Kananen
Assignee
Sony Corporation
JP
IPC
G11C 11/34
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