05998833 is referenced by 350 patents and cites 26 patents.

Integrated power semiconductor devices having improved high frequency switching performance, improved edge termination characteristics and reduced on-state resistance include GD-UMOSFET unit cells with upper trench-based gate electrodes and lower trench-based source electrodes. The use of the trench-based source electrode instead of a larger gate electrode reduces the gate-to-drain capacitance (C.sub.GD) of the UMOSFET and improves switching speed by reducing the amount of gate charging and discharging current that is needed during high frequency operation.

Title
Power semiconductor devices having improved high frequency switching and breakdown characteristics
Application Number
9/178845
Publication Number
5998833
Application Date
October 26, 1998
Publication Date
December 7, 1999
Inventor
Bantval Jayant Baliga
Raleigh
NC, US
Agent
Myers Bigel Sibley & Sajovec
Assignee
North Carolina State University
NC, US
IPC
H01L 27/095
H01L 31/113
H01L 31/062
H01L 29/94
H01L 29/76
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