05976936 is referenced by 169 patents and cites 23 patents.

A silicon carbide semiconductor device having a high blocking voltage, low loss, and a low threshold voltage is provided. An n.sup.+ type silicon carbide semiconductor substrate 1, an n.sup.- type silicon carbide semiconductor substrate 2, and a p type silicon carbide semiconductor layer 3 are successively laminated on top of one another. An n.sup.+ type source region 6 is formed in a predetermined region of the surface in the p type silicon carbide semiconductor layer 3, and a trench 9 is formed so as to extend through the n.sup.+ type source region 6 and the p type silicon carbide semiconductor layer 3 into the n.sup.- type silicon carbide semiconductor layer 2. A thin-film semiconductor layer (n type or p type) 11a is extendedly provided on the surface of the n.sup.+ type source region 6, the p type silicon carbide semiconductor layer 3, and the n.sup.- type silicon carbide semiconductor layer 2 in the side face of the trench 9.

Title
Silicon carbide semiconductor device
Application Number
708582
Publication Number
5976936
Application Date
July 15, 1997
Publication Date
November 2, 1999
Inventor
Hiroo Fuma
Gifu
JP
Kazukuni Hara
Obu
JP
Norihito Tokura
Okazaki
JP
Takeshi Miyajima
Kariya
JP
Agent
Pillsbury Madison & Sutro
Assignee
Denso Corporation
JP
IPC
H01L 21/8234
H01L 21/336
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