05973360 is referenced by 159 patents and cites 16 patents.

The field effect-controllable semiconductor component has a drain zone of the first conductivity type and also at least one gate electrode which is composed of polycrystalline silicon and is insulated from the drain zone. A source region of the second conductivity type is introduced in the drain zone. In addition, there is formed in the drain zone a trench structure, which reach from the surface of the epitaxial layer down into the substrate layer. An additional field plate made of polysilicon and embedded in an oxide layer is introduced in the trench structure. The thickness of the oxide surrounding the field plate increases down in a direction towards the drain.

Title
Field effect-controllable semiconductor component
Application Number
PCTDE9700528
Publication Number
5973360
Application Date
September 21, 1998
Publication Date
October 26, 1999
Inventor
Jenoe Tihanyi
Kirchheim
DE
Agent
Laurence A Greenberg
Herbert L Lerner
Assignee
Siemens Aktiengesellschaft
DE
IPC
H01L 29/76
View Original Source