05969422 is referenced by 381 patents and cites 12 patents.

A high conductivity interconnect structure is formed by electroplating or electroless plating of Cu or a Cu-base alloy on a seed layer comprising an alloy of a catalytically active metal, such as Cu, and a refractory metal, such as Ta. The seed layer also functions as a barrier/adhesion layer for the subsequently plated Cu or Cu-base alloy. Another embodiment comprises initially depositing a refractory metal barrier layer before depositing the seed layer.

Title
Plated copper interconnect structure
Application Number
8/857129
Publication Number
5969422
Application Date
May 15, 1997
Publication Date
October 19, 1999
Inventor
Valery Dubin
Cupertino
CA, US
Chiu Ting
Saratoga
CA, US
Assignee
Advanced Micro Devices
CA, US
IPC
H01L 29/45
View Original Source