05965915 is referenced by 25 patents and cites 11 patents.

A laser doping process comprising: irradiating a laser beam operated in a pulsed mode to a single crystal semiconductor substrate of a first conductive type in an atmosphere of an impurity gas which imparts the semiconductor substrate a conductive type opposite to said first conductive type and incorporating the impurity contained in said impurity gas into the surface of said semiconductor substrate, thereby modifying the type and/or the intensity of the conductive type thereof. Provides devices having a channel length of 0.5 .mu.m or less and impurity regions 0.1 .mu.m or less in depth.

Title
Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same
Application Number
142048
Publication Number
5965915
Application Date
April 23, 1997
Publication Date
October 12, 1999
Inventor
Yasuhiko Takemura
Kanagawa
JP
Shunpei Yamazaki
Tokyo
JP
Agent
Sixbey Friedman Leedom & Ferguson P C
Agent
Eric J Robinson
Assignee
Semiconductor Energy Laboratory
JP
IPC
H01L 29/788
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