05961877 is referenced by 29 patents and cites 16 patents.

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.

Title
Wet chemical etchants
Application Number
336949
Publication Number
5961877
Application Date
December 6, 1995
Publication Date
October 5, 1999
Inventor
Li Ling
c/o Intel Corp., MS D1-50, 5200 NE. Elam Young Pkwy., Hillsboro, 97124-6497
OR, US
Charles E Hunt
1224 Fordham Dr., Davis, 95616
CA, US
Richard C Westhoff
2559 N. Tamarisk St., Chandler, 85224
AZ, US
McDonald Robinson
5880 Hidden La., Goleta, 93117
CA, US
Agent
Robert Patent Planet Moll
IPC
C09K 13/00
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