05943355 is referenced by 1 patents and cites 2 patents.

A semiconductor light emitting device composed of an n-type cladding layer, an n-type guide layer, an active layer, a p-type guide layer, and a p-type cladding layer which are sequentially laminated on a substrate. The p-type guide layer is formed from ZnSSe mixed crystal doped with nitrogen. That side of the p-type guide layer which is adjacent to the p-type cladding layer is a p-type semiconductor region in which the concentration of nitrogen is 2.times.10.sup.17 cm.sup.-3, and that side adjacent to the active layer is an intrinsic semiconductor region. The p-type cladding layer is formed from ZnMgSSe mixed crystal doped with nitrogen. That side of the p-type cladding layer which is adjacent to the p-type guide layer is the low-concentration region in which the concentration of nitrogen is 1.times.10.sup.17 cm.sup.-3 which is lower than the concentration at which the rate of activation begins to decrease. The opposite side is the high-concentration region in which the concentration of nitrogen os 2.times.10.sup.17 cm.sup.-3 which is lower than the seturated concentration.

The semiconductor light emitting device has a prolonged life owing to the adequate concentration of p-type impurity in the p-type cladding layer.

Title
Semiconductor light emitting device
Application Number
8/865059
Publication Number
5943355
Application Date
May 29, 1997
Publication Date
August 24, 1999
Inventor
Masao Ikeda
Kanagawa
JP
Yumi Sanaka
Kanagawa
JP
Agent
Hill & Simpson
Assignee
Sony Corporation
JP
IPC
H01L 33/00
H01S 3/19
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