05930627 is referenced by 20 patents and cites 9 patents.

Silicon enriched silicon oxynitride is used in applications both as an independent etch stop and as a cap layer and sidewall component over polysilicon gate electrodes in order to prevent insulator thinning and shorts caused by a mis-aligned contact mask. In one embodiment a silicon enriched silicon oxynitride layer is placed over a polysilicon gate with conventional sidewalls and insulative cap. In another embodiment the insulative cap and the sidewalls are formed of a silicon enriched silicon oxinitride. Etching of contact openings in the subsequently deposited insulative layer is suppressed by the silicon enriched silicon oxynitride if it is engaged because of a mis-aligned contact mask. In another embodiment a polysilicon stack edge of a memory device is protected by a conformal silicon oxynitride layer during etching of a self-aligned-source (SAS) region. These embodiments are accomplished with minimal and virtually negligible increase in process complexity or cost.

Title
Process improvements in self-aligned polysilicon MOSFET technology using silicon oxynitride
Application Number
8/851403
Publication Number
5930627
Application Date
May 5, 1997
Publication Date
July 27, 1999
Inventor
Kok Hiang Stephanie Tang
Singapore
SG
Wing Hong Chiu
Singapore
SG
Jian Xun Li
Singapore
SG
Koon Lay Denise Tan
Singapore
SG
Sheau Tan Loong
Singapore
SG
Mei Sheng Zhou
Singapore
SG
Agent
Stephen B Ackerman
George O Saile
Assignee
Chartered Semiconductor Manufacturing Company
SG
IPC
H01L 21/8247
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