05920788 is referenced by 425 patents and cites 37 patents.

A chalcogenide memory cell with chalcogenide electrodes positioned on both sides of the active chalcogenide region of the memory cell. The chalcogenide memory cell includes upper and lower chalcogenide electrodes with a dielectric layer positioned therebetween. The dielectric layer includes an opening defining a pore. A volume of chalcogenide material formed integral to the upper chalcogenide electrode is contained within the pore. The upper and lower chalcogenide electrodes both have greater cross sectional areas than the pore.

Title
Chalcogenide memory cell with a plurality of chalcogenide electrodes
Application Number
486375
Publication Number
5920788
Application Date
December 16, 1997
Publication Date
July 6, 1999
Inventor
Alan R Reinberg
Westport
CT, US
Agent
Fletcher Yoder & Van Someren
Assignee
Micron Technology
ID, US
IPC
H01L 9/00
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