05916365 is referenced by 544 patents and cites 15 patents.

The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

Title
Sequential chemical vapor deposition
Application Number
8/699002
Publication Number
5916365
Application Date
August 16, 1996
Publication Date
June 29, 1999
Inventor
Arthur Sherman
600 Sharon Park Dr., Suite C-307, Menlo Park, 94025
CA, US
Agent
Wilson Sonsini Goodrich & Rosati
Agent
Robert Moll
IPC
C30B 25/14
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