05906708 is referenced by 91 patents and cites 15 patents.

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.

Title
Silicon-germanium-carbon compositions in selective etch processes
Application Number
336949
Publication Number
5906708
Application Date
December 6, 1995
Publication Date
May 25, 1999
Inventor
Li Ling
Hillsboro
OR, US
Charles E Hunt
Davis
CA, US
Richard C Westhoff
Chandler
AZ, US
McDonald Robinson
Goleta
CA, US
Agent
Wilson Sonsini Goodrich & Rosati
Assignee
Lawrence Semiconductor Research Laboratory
AZ, US
IPC
C23F 1/24
H01L 21/84
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