05904541 is referenced by 9 patents and cites 8 patents.

A semiconductor device having a shallow trench isolation structure, where the upper part of the trench is broader than the lower part of it, comprises an insulating layer on the sidewalls of the upper part of the trench, another insulating layer buried in the trench for isolating semiconductor devices and low-concentration doped regions near the upper part of the trench and high-concentration doped regions near the lower part of the trench. Therefore, the leakage current is prevented due to the sufficient amount of the ions in the high-concentration doped regions near the lower part of the trench and the narrow width effect is minimized owing to the insulating layer on the sidewalls of the upper part of the trench.

Title
Method for fabricating a semiconductor device having a shallow trench isolation structure
Application Number
8/879806
Publication Number
5904541
Application Date
June 20, 1997
Publication Date
May 18, 1999
Inventor
Seong Min Hwang
Kyoungkido
KR
Kwang Myoung Rho
Kyoungkido
KR
Agent
Jacobson Price Holman & Stern PLLC
Assignee
Hyundai Electronics
KR
IPC
H01L
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