05897379 is referenced by 24 patents and cites 9 patents.

A method of using diluted nitric acid and an edge bead removal tool to remove copper from the perimeter of a semiconductor wafer is provided. In one embodiment, sensitive areas of the wafer are covered with photoresist, and the wafer perimeter cleared of photoresist, before the acid is applied. In another embodiment, sensitive areas of the wafer are protected with water spray as the copper etchant is applied. In a third embodiment, the nitric acid is applied to clear the wafer perimeter of copper before a chemical mechanical polishing (CMP) is performed on the layer of deposited copper. The excess thickness of copper protects copper interconnection structures from reacting with the copper etchant. All these methods permit copper to be removed at a low enough temperature that copper oxides are not formed. A semiconductor wafer cleaned of copper in accordance with the above-described method, and a system for low temperature copper removal is also provided.

Title
Low temperature system and method for CVD copper removal
Application Number
8/995112
Publication Number
5897379
Application Date
December 19, 1997
Publication Date
April 27, 1999
Inventor
Masato Kobayashi
Vancouver
WA, US
Tue Nguyen
Vancouver
WA, US
Bruce Dale Ulrich
Beaverton
OR, US
Agent
David C Ripma
Gerald Maliszewski
Assignee
Sharp Kabushiki Kaisha
JP
Sharp Microelectronics Technology
WA, US
IPC
B44C 1/22
H01L 21/308
H01L 21/304
H01L 21/306
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