05891513 is referenced by 269 patents and cites 8 patents.

A method of utilizing electroless copper deposition to form interconnects on a semiconductor wafer. Once a via or a trench is formed in a dielectric layer, a titanium nitride (TiN) or tantalum (Ta) barrier layer is blanket deposited. Then, a contact displacement technique is used to form a thin activation seed layer of copper on the barrier layer. An electroless deposition technique is then used to auto-catalytically deposit copper on the activated barrier layer. The electroless copper deposition continues until the via/trench is filled. Subsequently, the surface is polished by an application of chemical-mechanical polishing (CMP) to remove excess copper and barrier material from the surface, so that the only copper and barrier material remaining are in the via/trench openings. Then an overlying silicon nitride (SiN) layer is formed above the exposed copper in order to form a dielectric barrier layer. The copper interconnect is fully encapsulated from the adjacent material by the TiN (or Ta) and the SiN layers.

Title
Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications
Application Number
8/587262
Publication Number
5891513
Application Date
January 16, 1996
Publication Date
April 6, 1999
Inventor
Prahalad K Vasudev
Austin
TX, US
Bin Zhao
Austin
TX, US
Chiu H Ting
Saratoga
CA, US
Yosef Shacham Diamand
Ithaca
NY, US
Valery M Dubin
Cupertino
CA, US
Assignee
Sematech
TX, US
Intel Corporation
CA, US
Cornell Research Foundation
NY, US
IPC
B05D 5/12
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