05882987 is referenced by 340 patents and cites 8 patents.

A process applicable to the production of monocrystalline films improves on the Smart-Cut.RTM. process by using an etch stop layer in conjunction with the Smart-Cut.RTM. process. Because of the etch stop layer, no chemical-mechanical polishing (CMP) is required after fabrication. Thus, the thickness and smoothness of the device layer in the fabricated silicon on insulator (SOI) substrate is determined by the uniformity and smoothness of the deposited layers and wet etch selectivity, as opposed to the CMP parameters. Therefore, the smoothness and uniformity of the device layer are improved.

Title
Smart-cut process for the production of thin semiconductor material films
Application Number
8/920117
Publication Number
5882987
Application Date
August 26, 1997
Publication Date
March 16, 1999
Inventor
Kris V Srikrishnan
Wappingers Falls
NY, US
Agent
Ratner & Prestia
Agent
Tiffany L Townsend
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/30
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