05873942 is referenced by 72 patents and cites 17 patents.

An apparatus for low pressure chemical vapor deposition for fabricating a semiconductor device comprises a group of reaction chambers, a group of high-vacuum pumps connected to the reaction chambers, a group of gate valves connected to the high-vacuum pumps, and a low-vacuum pump connected to the gate valves. There are fewer gate valves than high-vacuum pumps. A method for fabricating a semiconductor device using the above apparatus includes the sequence and duration of opening gate valves, injecting reaction gases, and pumping with the low vacuum pump. According to the present invention, since the number of pumps is reduced, the cost for installation, operation and maintenance of the semiconductor device fabrication apparatus is reduced.

Title
Apparatus and method for low pressure chemical vapor deposition using multiple chambers and vacuum pumps
Application Number
8/906879
Publication Number
5873942
Application Date
August 6, 1997
Publication Date
February 23, 1999
Inventor
Jung Ki Kim
Seoul
KR
Young Sun Kim
Kyungki-do
KR
Jun Sig Park
Kyungki-do
KR
Agent
Jones & Volentine L
Assignee
Samsung Electronics
KR
IPC
C23C 16/00
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