05872058 is referenced by 204 patents and cites 5 patents.

A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes while reducing the concentration of the inert gas, such as Ar, to 0-13% of the total process gas flow. By reducing the inert gas concentration, sputtering or etching is reduced, resulting in reduced sidewall deposition from the sputtered material. Consequently, gaps with aspect ratios of 3.0:1 and higher can be filled without the formation of voids and without damaging circuit elements.

Title
High aspect ratio gapfill process by using HDP
Application Number
8/876949
Publication Number
5872058
Application Date
June 17, 1997
Publication Date
February 16, 1999
Inventor
Thomas W Mountsier
San Jose
CA, US
Patrick A Van Cleemput
Sunnyvale
CA, US
Agent
Skjerven Morrill MacPherson Franklin & Friel
Agent
Tom Chen
David E Steuber
Assignee
Novellus Systems
CA, US
IPC
H01C 71/302
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