05867429 is referenced by 497 patents and cites 17 patents.

Electric field coupling between floating gates of a high density flash EEPROM cell array has been found to produce errors in reading the states of the cells, particularly when being operated with more than two storage states per cell. The effect of this coupling is overcome by placing a conductive shield or insulating material with a low dielectric constant between adjacent floating gates, and/or by compensating for the coupling when reading the states of the cells.

Title
High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
Application Number
8/974276
Publication Number
5867429
Application Date
November 19, 1997
Publication Date
February 2, 1999
Inventor
Yupin Fong
Fremont
CA, US
Jian Chen
San Jose
CA, US
Agent
Majestic Parsons Siebert & Hsue
Assignee
SanDisk Corporation
CA, US
IPC
G11C 16/04
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