05846332 is referenced by 165 patents and cites 18 patents.

A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. Despite its thermal isolation, the peripheral ring is electrically connected to the pedestal to prevent arcing. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

Title
Thermally floating pedestal collar in a chemical vapor deposition chamber
Application Number
8/680724
Publication Number
5846332
Application Date
July 12, 1996
Publication Date
December 8, 1998
Inventor
Michal Danek
Cupertino
CA, US
Charles Dornfest
Fremont
CA, US
Stefan Wolff
Sunnyvale
CA, US
Talex Sajoto
Campbell
CA, US
Alex Schreiber
Santa Clara
CA, US
Lee Luo
Fremont
CA, US
Mei Chang
Saratoga
CA, US
Avi Tepman
Cupertino
CA, US
Ashok Sinha
Palo Alto
CA, US
Jun Zhao
Cupertino
CA, US
Agent
Michael B Einschlag
Charles S Guenzer
Assignee
Applied Materials
CA, US
IPC
C93C 16/44
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