05831276 is referenced by 254 patents and cites 38 patents.

A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed proximate to inner surfaces of a diode container. A multi-state memory element may be formed of a multi-state material, such as a chalcogenide, above a diode to complete a memory cell.

Title
Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
Application Number
483760
Publication Number
5831276
Application Date
July 22, 1996
Publication Date
November 3, 1998
Inventor
Charles L Ingalls
Meridian
ID, US
Graham R Wolstenholme
Boise
ID, US
Raymond A Turi
Boise
ID, US
Fernando Gonzalez
Boise
ID, US
Agent
Fletcher Yoder & Edwards
Assignee
Micron Technology
ID, US
IPC
H01L 9/00
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