05811208 is referenced by 10 patents and cites 2 patents.

A phase shift mask, e.g. a halftone phase shift mask, which need not to form an ultra-fine pattern and is capable of suppressing during exposure the occurrence of a sub-peak of light intensity, which has an adverse effect on the image formation, and which has a light-blocking pattern with a reduced transmittance at a region outside a device pattern area which corresponds to a region subjected to multiple exposure during transfer effected by using the mask. The halftone phase shift mask has on a transparent substrate (101) a halftone phase shift film (102) comprising a single layer or a plurality of layers. The composition of the halftone phase shift film (102) is changed in a region (107) outside a device pattern area on the transparent substrate (101) which corresponds to a multiple-exposure region by a method wherein the region (107) is irradiated with an electromagnetic wave, a particle beam, heat rays, etc., or a method wherein after a region in which the composition is not desired to change has been masked, the whole blank is exposed to an active atmosphere, thereby reducing the transmittance for exposure light at the region (107).

Title
Phase shift mask and method of producing the same
Application Number
8/691369
Publication Number
5811208
Application Date
August 2, 1996
Publication Date
September 22, 1998
Inventor
Hiroshi Mohri
Tokyo
JP
Chiaki Hatsuda
Tokyo
JP
Koichi Mikami
Tokyo
JP
Toshifumi Yokoyama
Tokyo
JP
Agent
Sughrue Mion Zinn Macpeak & Seas PLLC
Assignee
Dai Nippon Printing
JP
IPC
G03F 9/00
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