05770519 is referenced by 27 patents and cites 10 patents.

A multilayer semiconductor structure includes a conductive via. The conductive via includes a reservoir of metal having a high resistance to electromigration. The reservoir is made from a conformal layer of copper, or gold deposited over the via to form a copper, or gold plug located in the via. A barrier layer is provided between the reservoir and an insulating layer to prevent the reservoir from diffusing into the insulating layer. The barrier layer and reservoir may be deposited by sputtering, collimated sputtering, chemical vapor deposition (CVD), dipping, evaporating, or by other means. The barrier layer and reservoir may be etched by anisotropic dry etching, plasma-assisted etching, or other layer removal techniques.

Title
Copper reservoir for reducing electromigration effects associated with a conductive via in a semiconductor device
Application Number
8/464305
Publication Number
5770519
Application Date
June 5, 1995
Publication Date
June 23, 1998
Inventor
Ming Ren Lin
Cupertino
CA, US
Subhash Gupta
San Jose
CA, US
Bryan Tracy
Oakland
CA, US
Scott Luning
Menlo Park
CA, US
Robin Cheung
Cupertino
CA, US
Steven Avanzino
Cupertino
CA, US
Darrell Erb
Los Altos
CA, US
Richard K Klein
Mountain View
CA, US
Agent
Foley & Lardner
Assignee
Advanced Micro Devices
CA, US
IPC
H01L 21/44
H01L 21/4763
View Original Source