05736448 is referenced by 84 patents and cites 17 patents.

A capacitor is fabricated on a base surface by applying a first pattern of electrical conductors (a first capacitor plate) over the base surface with an outer surface of the first pattern of electrical conductors including molybdenum. A first hard portion of a capacitor dielectric layer including amorphous hydrogenated carbon is deposited over the first capacitor plate and the base surface, a soft portion of the capacitor dielectric layer is deposited over the first hard portion, and a second hard portion of the capacitor dielectric layer is deposited over the soft portion. The deposition of the soft portion occurs at a lower bias voltage than the deposition of the first and second hard portions. A second pattern of electrical conductors (a second capacitor plate) is applied over the capacitor dielectric layer which is then patterned. A polymer layer is applied over the first and second capacitor plates, and two vias are formed, a first via extending to the first capacitor plate and a second via extending to the second capacitor plate. An electrode-coupling pattern of electrical conductors is applied over the polymer layer, a first portion extending into the first via and a second portion extending into the second via. Deposition of the capacitor dielectric layer can include using a methylethylketone precursor. Additional capacitor dielectric layers and plates having staggered via landing pads can be layered to increase the capacitance.

Title
Fabrication method for thin film capacitors
Application Number
8/566616
Publication Number
5736448
Application Date
December 4, 1995
Publication Date
April 7, 1998
Inventor
Bernard Gorowitz
Clifton Park
NY, US
Kevin Matthew Durocher
Waterford
NY, US
Richard Joseph Saia
Schenectady
NY, US
Agent
Marvin Snyder
Ann M Agosti
Assignee
General Electric Company
NY, US
IPC
H01L 21/20
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