05733816 is referenced by 171 patents and cites 10 patents.

This invention is a process for depositing tungsten metal on a silicon surface with the deposited layer having improved uniformity of thickness over prior art deposition techniques. The process involves the steps of removing any native silicon dioxide present on the silicon surface, forming a barrier layer which overlies the silicon surface which prevents the upward diffusion of silicon atoms from the polycrystalline surface, and depositing a final tungsten metal layer on top of the barrier layer. The barrier layer is preferably a refractory metal nitride. It may be formed directly by chemical vapor deposition, by reactive sputtering, or it may be formed indirectly by depositing a preliminary tungsten metal layer, subjecting the preliminary layer to a plasma formed from NH.sub.3 and N.sub.2 gases. Both preliminary and final tungsten metal layers are deposited preferably via chemical vapor deposition using the WF.sub.6 and SiH.sub.4 as reactants.

Title
Method for depositing a tungsten layer on silicon
Application Number
8/572164
Publication Number
5733816
Application Date
December 13, 1995
Publication Date
March 31, 1998
Inventor
Irina Vasilyeva
Boise
ID, US
Ravi Iyer
Boise
ID, US
Agent
Fillmore Belliston & Israelsen
Agent
Angus C Fox III
Assignee
Micron Technology
ID, US
IPC
H01L 21/28
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