05695810 is referenced by 447 patents and cites 7 patents.

A technique for electrolessly depositing a CoWP barrier material on to copper and electrolessly depositing copper onto a CoWP barrier material to prevent copper diffusion when forming layers and/or structures on a semiconductor wafer.

Title
Use of cobalt tungsten phosphide as a barrier material for copper metallization
Application Number
8/754600
Publication Number
5695810
Application Date
November 20, 1996
Publication Date
December 9, 1997
Inventor
Chiu H Ting
Saratoga
CA, US
Prahalad K Vasudev
Austin
TX, US
Bin Zhao
Irvine
CA, US
Yosi Schacham Diamand
Ithaca
NY, US
Valery M Dubin
Cupertino
CA, US
Agent
William W Kidd
Assignee
Intel Corporation
CA, US
Sematech
TX, US
Cornell Research Foundation
NY, US
IPC
B05D 1/18
B05D 5/12
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