05640032 is referenced by 42 patents and cites 12 patents.

A non-volatile semiconductor memory device comprises a semiconductor substrate, a shield gate electrode formed over a device isolation region of the semiconductor substrate through a shield gate insulating film, a floating gate electrode formed over a device region of the semiconductor substrate through a tunnel insulating film, the device region lying adjacent to the device isolation region and a part of the floating gate electrode overlapping the device isolation region so as to form a gap region therebetween, and a control gate electrode formed over the floating gate electrode through an oxide/nitride/oxide (ONO) film and formed over the shield gate electrode through a shield cap insulating film such that a part of the control gate electrode extends into the gap region.

Title
Non-volatile semiconductor memory device with improved rewrite speed
Application Number
8/525264
Publication Number
5640032
Application Date
September 7, 1995
Publication Date
June 17, 1997
Inventor
Yugo Tomioka
Tokyo
JP
Agent
Law Offices Pollock Vande Sande & Priddy
Assignee
Nippon Steel Corporation
JP
IPC
H01L 29/68
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