05639691 is referenced by 8 patents and cites 4 patents.

A multilayer semiconductor structure includes a conductive via. The conductive via includes a pellet of metal having a high resistance to electromigration. The pellet is made from a conformal layer of copper or gold deposited over the via to form a copper or gold reservoir or contact located in the via. A barrier layer is provided between the reservoir and an insulating layer to prevent the pellet from diffusing into the insulating layer. The pellet can be formed by selective deposition or by etching a conformal layer. The conformal layer can be deposited by sputtering, collimated sputtering, chemical vapor deposition (CVD), dipping, evaporating, or by other means. The barrier layer and pellet may be etched by anisotropic dry etching, plasma-assisted etching, or other layer removal techniques.

Title
Copper pellet for reducing electromigration effects associated with a conductive via in a semiconductor device
Application Number
461428
Publication Number
5639691
Application Date
January 24, 1996
Publication Date
June 17, 1997
Inventor
Ming Ren Lin
Cupertino
CA, US
Subhash Gupta
San Jose
CA, US
Bryan Tracy
Oakland
CA, US
Scott Luning
Menlo Park
CA, US
Robin Cheung
Cupertino
CA, US
Steven Avanzino
Cupertino
CA, US
Darrell M Erb
Los Altos
CA, US
Richard K Klein
Mountain View
CA, US
Agent
Foley & Lardner
Assignee
Advanced Micro Devices
CA, US
IPC
H01L 21/283
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