05635767 is referenced by 155 patents and cites 6 patents.

A high frequency bypass capacitor (36, 36') is built into a thin-film portion (16, 16') of a polymer carrier substrate (15) of a PBGA (10). The carrier substrate (15) has both a stiffener (18) and a thin-film portion (16, 16') which has multiple metal layers (24, 28, 30, 32). The power supply planes (28, 30) of these metal layers are used to form built-in bypass capacitors (36, 36'), wherein the power supply planes are specifically designed to be adjacent and parallel layers. An ultra thin film laminate construction provides thin dielectric films (26) between the metal layers to allow the bypass capacitor to be placed very dose to the attached semiconductor die (12) to further reduce parasitic inductance and resistance between die connections (14) and the bypass capacitor. The built-in feature minimizes inherent parasitic series inductance and resistance, thus enabling the filtering of unwanted low pulse width glitches on a power plane connected to VLSI devices at operating frequencies at or above 100 MHz.

Title
Semiconductor device having built-in high frequency bypass capacitor
Application Number
8/460338
Publication Number
5635767
Application Date
June 2, 1995
Publication Date
June 3, 1997
Inventor
Stephen W Foster
Dripping Springs
TX, US
Mona A Chopra
Austin
TX, US
James F Wenzel
Austin
TX, US
Assignee
Motorola
IL, US
IPC
H01L 23/58
H01L 23/48
H01L 23/52
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