05607773 is referenced by 38 patents and cites 1 patents.

A method of forming a planar dielectric layer over an interconnect pattern which requires fewer processing steps and has a lower dielectric constant than is obtained in the prior art. The method comprises providing a substrate having an electrical interconnect pattern thereon, forming a first layer of dielectric over the interconnect pattern, preferably by plasma generated TEOS oxide, forming a porous second layer of silicon-containing dielectric with low dielectric constant different from the first layer over the first dielectric layer from an inorganic silicon-containing composition, preferably hydrogen silsesquioxane and forming a third layer of dielectric different from the second layer over the second dielectric layer, preferably by a plasma generated TEOS oxide. The step of forming the second layer comprises the steps of depositing an inorganic silicon-containing composition capable of being pyrolytically converted to a silicon oxide over the first layer and placing the resulting structure in an essentially pure nitrogen and essentially moisture-free environment at a pressure at or below atmospheric pressure and then heating the silicon-containing composition to a temperature of from about 375.degree. C. to about 425.degree. C. and preferably 400.degree. C. for from about 30 minutes to about 90 minutes to convert the silicon-containing composition to silicon oxide.

Title
Method of forming a multilevel dielectric
Application Number
8/359784
Publication Number
5607773
Application Date
December 20, 1994
Publication Date
March 4, 1997
Inventor
Thomas R Seha
Dallas
TX, US
Byron T Ahlburn
Plano
TX, US
Agent
Richard Donaldson
Leo Heiting
Robby Holland
Assignee
Texas Instruments Incorporated
TX, US
IPC
B32B 9/00
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