05597765 is referenced by 123 patents and cites 26 patents.

A termination structure (located along a transistor perimeter or a die edge) for a trenched MOSFET or other semiconductor device prevents the undesirable surface channelling phenomena without the need for any additional masking steps to form a channel stop. This structure is especially applicable to P-channel MOSFETs. In the prior art a mask defines a doped channel stop. Instead here, a blanket ion implantation of P-type ions is performed after the active area masking process. Thus this doped channel stop termination is in effect masked during fabrication by the field oxide. In another version the channel stop termination is an additional trench formed in the termination region of the MOSFET. The trench is conventionally lined with oxide and filled with a conductive polysilicon field plate which extends to the edge of the die. In another version, the doped and trenched channel stops are used in combination. The channel stops are enhanced by provision of field plates overlying them on the die surface.

Title
Method for making termination structure for power MOSFET
Application Number
371174
Publication Number
5597765
Application Date
April 17, 1995
Publication Date
January 28, 1997
Inventor
Fwu Iuan Hshieh
San Jose
CA, US
Hamza Yilmaz
Saratoga
CA, US
Agent
Skjerven Morrill MacPherson Franklin & Friel
Agent
Norman R Klivans
Assignee
Siliconix incorporated
CA, US
IPC
H01L 21/44
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