05587947 is referenced by 17 patents and cites 100 patents.

A single transistor electrically erasable programmable memory device capable of being programmed and erased using Fowler-Nordheim tunneling and capable of being operated using low voltages. Portions of each of the source and drain regions overlap with the first gate dielectric layer, and the interpoly dielectric layer is chosen to have a high dielectric constant so as to maximize the capacitive coupling ratio between floating gate, control gate, source, and drain. The logical condition of cells in the array is set by first elevating a block of cells to a high voltage threshold and by individually lowering the voltage threshold of selected cells.

Title
Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase
Application Number
205327
Publication Number
5587947
Application Date
September 27, 1995
Publication Date
December 24, 1996
Inventor
Edwin Chow
Saratoga
CA, US
Jia Hwang Chang
Cupertino
CA, US
Shang De Chang
Fremont
CA, US
Agent
Limbach & Limbach L
Assignee
Rohm Corporation
CA, US
IPC
G11C 5/027
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