05578520 is referenced by 75 patents and cites 45 patents.

A method for manufacturing a semiconductor device including preparing a multi-chamber system having at least first and second chambers, the first chamber for forming a film and the second chamber for processing an object with a laser light; processing a substrate in one of the first and second chambers; transferring the substrate to the other one of the first and second chambers; and processing the substrate in the other one of the chambers, wherein the first and second chambers can be isolated from one another by using a gate valve.

Title
Method for annealing a semiconductor
Application Number
886817
Publication Number
5578520
Application Date
July 15, 1994
Publication Date
November 26, 1996
Inventor
Naoto Kusumoto
Kanagawa
JP
Hongyong Zhang
Kanagawa
JP
Agent
Sixbey Friedman Leedom & Ferguson P C
Agent
Eric J Robinson
Gerald J Ferguson Jr
Assignee
Semiconductor Energy Laboratory
JP
IPC
H01L 21/26
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