05569615 is referenced by 21 patents and cites 5 patents.

A laser doping process comprising: irradiating a laser beam operated in a pulsed mode to a single crystal semiconductor substrate of a first conductive type in an atmosphere of an impurity gas which imparts the semiconductor substrate a conductive type opposite to said first conductive type and incorporating the impurity contained in said impurity gas into the surface of said semiconductor substrate, thereby modifying the type and/or the intensity of the conductive type thereof. Provides devices having a channel length of 0.5 .mu.m or less and impurity regions 0.1 .mu.m or less in depth.

Title
Method for forming a flash memory by forming shallow and deep regions adjacent the gate
Application Number
142048
Publication Number
5569615
Application Date
December 14, 1994
Publication Date
October 29, 1996
Inventor
Yasuhiko Takemura
Kanagawa
JP
Shunpei Yamazaki
Tokyo
JP
Agent
Sixbey Friedman Leedom & Ferguson PC
Agent
Jeffrey L Costellia
Gerald J Ferguson Jr
Assignee
Semiconductor Energy Laboratory
JP
IPC
H01L 21/8247
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