05558717 is referenced by 314 patents and cites 27 patents.

A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.

Title
CVD Processing chamber
Application Number
8/348273
Publication Number
5558717
Application Date
November 30, 1994
Publication Date
September 24, 1996
Inventor
John M White
Hayward
CA, US
Alex Schreiber
Santa Clara
CA, US
Xin S Guo
Mountain View
CA, US
Kevin Fairbairn
Saratoga
CA, US
Stefan Wolff
Sunnyvale
CA, US
Charles Dornfest
Fremont
CA, US
Tom Cho
San Francisco
CA, US
Jun Zhao
Milpitas
CA, US
Agent
Janis Biksa
Assignee
Applied Materials
CA, US
IPC
C23C 16/00
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