05553273 is referenced by 59 patents and cites 10 patents.

An optical proximity correction (OPC) routine that enhances the fidelity of VLSI pattern transfer operations such as photolithography and reactive ion etch (RIE) by predistorting the mask while biasing only critical features and eliminating, as much as possible, the creation of additional vertices. The OPC routine accomplishes corrections in a timely and cost effective manner on realistic data sets without causing unnecessary increase in data volume. The OPC method employs a series of shrink, expand and subtraction operations that separate complex computer aided design (CAD) data for a lithography mask or reticle into sets of basic rectangles. More particularly, the OPC method first identifies a plurality of gate regions in a CAD design. A plurality of design shapes in the CAD design are sorted according to geometric type. A plurality of sorted design shapes share at least one side with a second design shape. The sorted design shapes are then grouped according to width. Finally, all of the grouped design shapes having been identified as gate regions are biased based on applicable OPC rules.

Title
Vertex minimization in a smart optical proximity correction system
Application Number
8/423597
Publication Number
5553273
Application Date
April 17, 1995
Publication Date
September 3, 1996
Inventor
Lars W Liebmann
Poughquag
NY, US
Agent
Whitham Curtis Whitham & McGinn
Agent
Charles W Peterson Jr
Assignee
International Business Machines Corporation
NY, US
IPC
G03F 7/00
H01L 21/027
View Original Source