05540810 is referenced by 108 patents and cites 17 patents.

The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a cmp process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chemical is a strong base chemical, like KOH, or potassium hydroxide. Moreover, the cmp process utilizes a system of closely regulating the timing of the two chemical process. Specifically, during a first time period, both chemicals are applied; thus increasing speed of the chemical removal of tungsten material. During a second time period, the KOH is removed, thus slowing down the chemical action and importantly achieving a greater degree of planerization than is capable by the two chemical first time period.

Title
IC mechanical planarization process incorporating two slurry compositions for faster material removal times
Application Number
989243
Publication Number
5540810
Application Date
June 20, 1995
Publication Date
July 30, 1996
Inventor
Jody D Larsen
Boise
ID, US
Trung T Doan
Boise
ID, US
Richard L Elliott
Boise
ID, US
Gurtej Sandhu
Boise
ID, US
Assignee
Micron Technology
ID, US
IPC
B24B 1/00
H01L 21/00
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