The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a cmp process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chemical is a strong base chemical, like KOH, or potassium hydroxide. Moreover, the cmp process utilizes a system of closely regulating the timing of the two chemical process. Specifically, during a first time period, both chemicals are applied; thus increasing speed of the chemical removal of tungsten material. During a second time period, the KOH is removed, thus slowing down the chemical action and importantly achieving a greater degree of planerization than is capable by the two chemical first time period.