05514628 is referenced by 41 patents and cites 5 patents.

A process is disclosed herein for increasing yield in a semiconductor circuity having redundant circuitry for replacing defective normal circuitry in the semiconductor integrated circuit. In the first step, an insufficient sinter operation (50) is carried out in a hydrogen atmosphere at a temperature of less than 350.degree. C. At this temperature, no significant change will be seen in the interface trap density. Thereafter, the integrated circuit is tested (54,56) and the defective normal circuitry then is replaced (58) with the redundant circuitry. The integrated circuit is then subjected to a sufficient sinter operation (64) which is an operation wherein the substrate is disposed at a temperature between 350.degree. C.-500.degree. C. for more than 30 minutes. This sufficient sinter operation is performed in a hydrogen atmosphere, allowing dangling bonds at the interface to be terminated with hydrogen. Preferable, the optimal temperature for the sufficient sinter is approximately 400.degree. C. The integrated circuit is then subjected to a reliability and burn-in procedure.

Title
Two-step sinter method utilized in conjunction with memory cell replacement by redundancies
Application Number
8/451644
Publication Number
5514628
Application Date
May 26, 1995
Publication Date
May 7, 1996
Inventor
Yoshinobu Yoneoka
Abiko
JP
Yoshihiro Ogata
Ibaraki
JP
Yoichi Miyai
Ibaraki
JP
Osaomi Enomoto
Ibaraki
JP
Agent
Richard B Havill
Leo Heiting
Rich Donaldson
Assignee
Texas Instruments Incorporated
TX, US
IPC
H01L 21/324
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