05510277 is referenced by 6 patents and cites 7 patents.

A method for desorbing the surface oxide on a silicon substrate is performed by implanting particles such at atomic or ionic hydrogen into the oxide layer on the silicon substrate. The oxide is then removed by breaking the bonds between the silicon and oxygen atoms within the oxide. The bonds may be broken by heating the substrate, for example. The temperature to which the substrate must be raised is substantially less than the temperature required to desorb an oxide layer that has not undergone an implantation step. In one particular example, the particles implanted into the oxide surface are hydrogen ions generated by electron cyclotron resonance.

Title
Surface treatment for silicon substrates
Application Number
8/268137
Publication Number
5510277
Application Date
June 29, 1994
Publication Date
April 23, 1996
Inventor
James A Walker
Howell
NJ, US
William Y Jan
Scotch Plains
NJ, US
Keith W Goossen
Aberdeen
NJ, US
John E Cunningham
Lincroft
NJ, US
Agent
Stuart H Mayer
Assignee
AT&T
NJ, US
IPC
H01L 21/302
View Original Source