05501893 is referenced by 466 patents and cites 16 patents.

A method of anisotropic plasma etching of silicon to provide laterally defined recess structures therein through an etching mask employing a plasma, the method including anisotropic plasma etching in an etching step a surface of the silicon by contact with a reactive etching gas to removed material from the surface of the silicon and provide exposed surfaces; polymerizing in a polymerizing step at least one polymer former contained in the plasma onto the surface of the silicon during which the surfaces that were exposed in a preceding etching step are covered by a polymer layer thereby forming a temporary etching stop; and alternatingly repeating the etching step and the polymerizing step. The method provides a high mask selectivity simultaneous with a very high anisotropy of the etched structures.

Title
Method of anisotropically etching silicon
Application Number
8/284490
Publication Number
5501893
Application Date
August 5, 1994
Publication Date
March 26, 1996
Inventor
Andrea Schilp
Schwabisch Gmund
DE
Franz Laermer
Stuttgart
DE
Agent
Spencer & Frank
Assignee
Robert Bosch
DE
IPC
B44C 1/22
C25F 3/12
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