05499600 is referenced by 6 patents and cites 5 patents.

A crystal solution growth method for growing a crystal by providing a temperature difference between the higher and lower regions of a solvent, and disposing a source crystal at a high temperature region of the solution and a seed crystal at a low temperature region of the solution. The crystal solution growth method includes the steps of: placing the seed crystal on a recess of a heat sink, the heat sink being disposed under the solvent and the recess being defined on the top surface of the heat sink; placing a seed stopper on the seed crystal to fix the seed crystal, the seed stopper having a tubular part with an inner diameter generally same as the seed crystal and a seed crystal fixing part for fixing the seed crystal formed at one end of, the tubular part on the seed crystal side; and forming a temperature difference between the higher and lower regions of the solvent and growing a crystal oil the surface of the seed crystal.

Title
Methods for compound semiconductor crystal growth from solution
Application Number
8/358864
Publication Number
5499600
Application Date
December 19, 1994
Publication Date
March 19, 1996
Inventor
Hiroyuki Kato
Yokohama
JP
Shotaro Tomita
Yokohama
JP
Yasuo Okuno
Yokohama
JP
Agent
Frishauf Holtz Goodman Langer & Chick
Assignee
Kanagawa Academy of Science and Technology
JP
Stanley Electric
JP
IPC
C30B 28/04
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