05489790 is referenced by 31 patents and cites 5 patents.

An SRAM cell includes a pair of cross-coupled inverters where each inverter includes vertical n-channel and p-channel transistors having a gate electrode that is shared between the transistors that make up each inverter. The gate electrodes for the inverters laterally surround the channel regions of the p-channel load transistors to achieve a relatively high beta ratio without occupying a large amount of substrate surface area. Also, the gate electrodes increase the amount of capacitance of the storage nodes and decreases the soft error rate. The active regions of the latch transistors are electrically isolated from the substrate by a buried oxide layer, thereby decreasing the chances of latch-up.

Title
Static-random-access memory cell
Application Number
232968
Publication Number
5489790
Application Date
January 30, 1995
Publication Date
February 6, 1996
Inventor
Craig S Lage
Austin
TX, US
Agent
George R Meyer
Assignee
Motorola
IL, US
IPC
H01L 29/76
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