05487999 is referenced by 157 patents and cites 22 patents.

A method for forming contacts for establishing an electrical connection with contact locations on a semiconductor die is provided. The contacts are formed as raised members mounted on a compliant substrate. Each contact includes a rough textured surface having asperities adapted to penetrate the contact location on the die to a limited penetration depth. The height of the asperities is between about 1000.ANG. to 10,000.ANG.. The textured surface and asperities are formed by electroplating a rough metal layer on a raised metal contact or by etching a surface of a raised metal contact. In an illustrative embodiment the contacts comprise microbumps formed on a compliant polyimide substrate. For forming an interconnect suitable for establishing a temporary electrical connection with an unpackaged semiconductor die, the polyimide substrate is attached to a rigid substrate, such as silicon, having a coefficient of thermal expansion that matches that of a silicon die. The interconnect can then be used with a carrier for testing the unpackaged die.

Title
Method for fabricating a penetration limited contact having a rough textured surface
Application Number
981956
Publication Number
5487999
Application Date
November 22, 1994
Publication Date
January 30, 1996
Inventor
Warren M Farnworth
Nampa
ID, US
Agent
Stephen A Gratton
Assignee
Micron Technology
ID, US
IPC
H01L 21/00
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