05483920 is referenced by 138 patents and cites 9 patents.

A novel method of forming large area single crystal cubic boron nitride films on a silicon substrate by first treating the surface of the substrate with atomic hydrogen and then depositing a cubic boron nitride film by a reactive biased laser ablation technique.

Title
Method of forming cubic boron nitride films
Application Number
8/102605
Publication Number
5483920
Application Date
August 5, 1993
Publication Date
January 16, 1996
Inventor
Roger W Pryor
Bloomfield Township
MI, US
Agent
Dykema Gossett
Assignee
Board of Governors of Wayne State University
MI, US
IPC
C30B 23/08
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