05477058 is referenced by 49 patents and cites 8 patents.

An attenuated phase-shifting mask has a circuit pattern formed of a layer of halftone phase-shifting material, e.g., SiNx, which inherently appears substantially transparent to the visible light utilized to align the mask with a wafer. The reticle alignment marks of the mask are made of a separate substantially opaque layer in order to ensure that the reticle alignment marks will be visible to the mask/wafer alignment equipment.

Title
Attenuated phase-shifting mask with opaque reticle alignment marks
Application Number
8/337536
Publication Number
5477058
Application Date
November 9, 1994
Publication Date
December 19, 1995
Inventor
Takashi Sato
Fishkill
NY, US
Agent
Banner & Allegretti
Assignee
Kabushiki Kaisha Toshiba
JP
IPC
G01N 21/86
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