05475247 is referenced by 4 patents and cites 8 patents.

In the manufacturing process of a Dynamic Random Access Memory cell, the conducting layer used for preventing the capacitive coupling between a bit line and a word line is formed over the surface of the entire memory cell excepting the contact region of a bit line and a storage electrode. Moreover, as the conducting layer used for preventing the capacitive coupling is used as an etching barrier in the etching process forming a contact hole, self-aligned contacts are formed. Therefore, the operation of the unwanted cell of a Dynamic Random Access Memory cell caused by the capacitive coupling is protected and a highly integrated Dynamic Random Access Memory cell is manufactured.

Title
Internally shielded dynamic random access memory cell
Application Number
46201
Publication Number
5475247
Application Date
June 13, 1994
Publication Date
December 12, 1995
Inventor
In Sool Chung
Kyoungki-do
KR
Jae Kap Kim
Kyoungki-do
KR
Agent
Morgan & Finnegan
Assignee
Hyundai Electronic
KR
IPC
H01L 21/70
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