05471364 is referenced by 73 patents and cites 8 patents.

A preferred embodiment of this invention comprises a first thin dielectric buffer layer of a first leakage-current-density material (e.g. strontium titanate 32) with a first moderate-dielectric-constant, a high-dielectric-constant layer of a second leakage-current-density material (e.g. barium strontium titanate 34) overlaying the first thin dielectric buffer layer, and a second thin dielectric buffer layer of a third leakage-current-density material (e.g. strontium titanate 36) with a second moderate-dielectric-constant overlaying the high-dielectric-constant layer, wherein the first and third leakage-current-density materials have substantially lower leakage-current-densities than the second leakage-current-density material. The first and second thin moderate-dielectric-constant buffer layers (e.g. strontium titanate 32, 36) substantially limit the leakage-current-density of the structure, with only modest degradation of the dielectric constant of the structure. The possibly lower dielectric constant of the structure is generally compensated for by the reduced leakage current of the structure. The additional layers generally require only minor modifications of existing processes, since the same processes that are used for the high-dielectric-constant oxide can generally be used for the low leakage-current-density dielectric. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.

Title
Electrode interface for high-dielectric-constant materials
Application Number
8/41025
Publication Number
5471364
Application Date
March 31, 1993
Publication Date
November 28, 1995
Inventor
Howard R Beratan
Richardson
TX, US
Scott R Summerfelt
Dallas
TX, US
Agent
Richard L Donaldson
James C Kesterson
Bret J Petersen
Assignee
Texas Instruments Incorporated
TX, US
IPC
H01G 1/01
H01G 4/10
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