05468984 is referenced by 167 patents and cites 4 patents.

An interconnection structure and method for a multiple zener diode ESD protectoin circuit for power semiconductor devices. A plurality of lateral Zener diodes is formed. Each device is formed of a plurality of cathode and anode diffusion regions to be coupled together to form the cathode and anode of one or more Zener diodes. Each diffusion region has a first metal layer stripe formed over it and in electrical contact with it. A second metal layer conductor is formed over a plurality of the first metal layer stripes, and selectively contacts the first metal layer stripes to form a bus. A thick third metal layer is then formed over each second metal layer bus, either physically contacting it or selectively electrically contacting it. The thick third level metal is fabricated of a highly conductive material, such as copper. The resulting Zener diodes are coupled together in an ESD structure using the second level busses and the thick copper third level busses. The ESD structure of the preferred embodiment has low overall resistance and fast time to breakdown and provides excellent protection for the circuits to be protected. Other devices, systems and methods are also disclosed.

Title
ESD protection structure using LDMOS diodes with thick copper interconnect
Application Number
8/333407
Publication Number
5468984
Application Date
November 2, 1994
Publication Date
November 21, 1995
Inventor
Dale J Skelton
Plano
TX, US
Dave Cotton
Plano
TX, US
Taylor R Efland
Richardson
TX, US
Agent
Richard L Donaldson
W James Brady III
Mark E Courtney
Assignee
Texas Instruments Incorporated
TX, US
IPC
H01L 27/085
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